• Samsung Electronics signed an MOU with Broadcom to expand collaboration across memory and foundry for next-generation AI infrastructure.
• Companies projected more than $200 billion of combined memory and foundry collaboration over the next five years through 2030.
• Deal scope includes HBM supply for Broadcom AI accelerators, Samsung 2-nm and below foundry work, supported by advanced packaging.

Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Samsung Electronics Co. Ltd. published the original content used to generate this news brief on July 25, 2026, and is solely responsible for the information contained therein.