Only a slight slip of the atomic layer on the Ami scale, or 0.1 nanometer scale, can leverage a 10 million times change in resistance. The research team at the Institute of Semiconductors of the Chinese Academy of Sciences overcame the industry problem that it is difficult to balance high switching ratio and high durability in sliding ferroelectric tunnels through two-dimensional Van der Waals heterojunction interface engineering. Researchers explained that if large-scale device arrays and supporting circuits are improved in the future, such devices are expected to achieve faster and lower power consumption data storage and computation, and can be applied to terminal hardware such as mobile phones and computers, providing new technical solutions to ease the contradiction between increased computing power and limited power consumption, and promote the implementation of a new computing architecture with integrated storage and computing. The relevant results were published in the international academic journal “Science” on September 11.

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