Changxin Technology, a leading domestic storage company, released a new technical architecture, and the global storage leader's stock price has clearly recovered recently. On October 13, Samsung Electronics and SK Hynix fell by more than 7%, and the decline narrowed and stabilized on October 14. Industry insiders analyzed to the Securities Times reporter that international storage giants have plummeted. In the short term, sentiment at the transaction level is excessive. In the long run, it reflects the market's revaluation of its monopoly barriers, and the server market will face fragmentation in the future. Reports show that on October 10, Dr. Cao Kanyu, President of Changxin Technology, announced the company's progress in DRAM devices, 4F^ [2] architectures, and hybrid bonding at the 4th Integrated Chip and Core Conference, and is expected to launch a new generation of DDR5 RDIMM products incorporating new technology by the end of the year. Compared to the mainstream 6F^ [2] architecture in the DRAM industry, 4F^ [2] means that each unit only accounts for 4 times the square of the minimum characteristic size, so the number of transistors per unit area will increase, achieving an increase in storage density. The core feature of this technology is innovation in DRAM storage array transistors, that is, self-developed VSG transistors.
Zhitongcaijing · 1d ago
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Changxin Technology, a leading domestic storage company, released a new technical architecture, and the global storage leader's stock price has clearly recovered recently. On October 13, Samsung Electronics and SK Hynix fell by more than 7%, and the decline narrowed and stabilized on October 14. Industry insiders analyzed to the Securities Times reporter that international storage giants have plummeted. In the short term, sentiment at the transaction level is excessive. In the long run, it reflects the market's revaluation of its monopoly barriers, and the server market will face fragmentation in the future. Reports show that on October 10, Dr. Cao Kanyu, President of Changxin Technology, announced the company's progress in DRAM devices, 4F^ [2] architectures, and hybrid bonding at the 4th Integrated Chip and Core Conference, and is expected to launch a new generation of DDR5 RDIMM products incorporating new technology by the end of the year. Compared to the mainstream 6F^ [2] architecture in the DRAM industry, 4F^ [2] means that each unit only accounts for 4 times the square of the minimum characteristic size, so the number of transistors per unit area will increase, achieving an increase in storage density. The core feature of this technology is innovation in DRAM storage array transistors, that is, self-developed VSG transistors.
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