Enphase Energy, Inc. (NASDAQ: ENPH), a global energy technology company, and Infineon Technologies AG (OTCQX:IFNNY) today announced that Enphase will deploy the world’s first 900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices, designed to operate in Enphase solid-state transformer power modules. The devices extend GaN technology to 900 V while retaining the high-frequency switching capabilities that enable compact, efficient power conversion.

Enphase has pioneered the system-level development and demonstration, building on more than 10 years of in-house research into GaN power conversion, with device technology and engineering expertise from Infineon. Enphase is among the first to bring 650 V GaN BDS devices into volume production power electronics, and GaN HEMT technology is already operating in Enphase IQ9™ Microinverters deployed in the field. Extending that work with Infineon beyond 650 V, using Infineon's CoolGaN™ bidirectional switch portfolio, opens the door further to medium-voltage systems.

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