When the chip with the circuit is immersed in room temperature water solution, the infrared photosensitive material directly “grows” on the chip surface. On October 28, Professor Tang Jiang's team from the School of Optics and Electronic Information of Huazhong University of Science and Technology and the Wuhan National Research Center of Optoelectronics published a research result online in “Nature” magazine. They used a room water solution process to directly grow the lead sulfide photosensitive layer on the readout circuit to make a 640 x 512 pixel shortwave infrared imaging chip. Tests showed that the photodiode developed by the team reached the highest level of detection rate of 2.5-micron infrared light at room temperature, higher than that of commercial indium gallium arsenic detectors of the same wavelength; the uniformity of each pixel response of the imaging chip is comparable to that of commercial indium gallium arsenic chips, and clearly captures infrared images of hot water, electric soldering iron, and other high temperature objects at 80 degrees Celsius to 600 degrees Celsius without cooling or filling up light. This process can also be used in flexible circuits to make bendable imaging arrays.

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