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Mitsubishi Electric Presents GaN Transistor Findings at International Workshop on Nitride Semiconductors
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Mitsubishi Electric Presents GaN Transistor Findings at International Workshop on Nitride Semiconductors
  • Mitsubishi Electric will attend the International Workshop on Nitride Semiconductors 2026, Nov. 8-13, at Kumamoto Castle Hall in Kumamoto, Japan.
  • Its presentation will cover GaN transistor advances that could simplify digital correction circuits, reducing high-frequency equipment size and power consumption.


Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Mitsubishi Electric Corporation published the original content used to generate this news brief on November 09, 2026, and is solely responsible for the information contained therein.

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